The 2SB1375 is a Silicon PNP Transistor.
| Max Operating Temp | 150 °C |
|---|
| Part Number | 2SB1375 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier 2SB1375 Unit: mm • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2 A, IB = −0.2 A) • High power . (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability. |
| Part Number | 2SB1375 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220F package ·Complement to type 2SD2012 ·Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2A,IB=-0.2A ·Collector power dissipation: PC=25W(TC=25 ) APPLICATIONS ·Audio frequency p. ector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IC=-2A ;IB=-0.2A IC=-0.5A;VCE=-5V VCB=-60V; IE=0 VEB=-7V; IC=0 IC=-0.5A ; VCE=-5V IC=-2A. |
| Part Number | 2SB1375 Datasheet |
|---|---|
| Description | Silicon PNP Transistor |
| Manufacturer | Galaxy Microelectronics |
| Overview |
Silicon PNP Triple Diffused Type
FEATURES
Low Saturation Voltage:VCE(sat)=-1.5V(max.)
(IC/IB=-2A/-0.2A)
Pb
High Power Dissipation:PC=25W(TC=25℃) Lead-free
Complements the 2SD2012.
Product.
* Low Saturation Voltage:VCE(sat)=-1.5V(max.) (IC/IB=-2A/-0.2A) Pb * High Power Dissipation:PC=25W(TC=25℃) Lead-free * Complements the 2SD2012. Production specification 2SB1375 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Un. |
| Part Number | 2SB1375 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Collector Power Dissipation- : PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -2A, IB= -0.2A) ·Complemen. herwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -0.5A ; VCE= -5V ICBO Collector Cutoff Current VCB= -60V ; IE= 0 IEBO Emitter . |
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| Part Number | Manufacturer | Description |
|---|---|---|
| B1375 | Toshiba | 2SB1375 |