| Part Number | 2SB1392 Datasheet |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SB1392
Silicon PNP Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220FM
12 3
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base vol.
breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio hFE1* hFE2 Base to emitter voltage Collector to emitter saturation voltage Base to emitter saturation voltage VBE VCE(sat) VBE(sat)
60 35 * * * V V V Notes: 1. Pul. |
2SB1392 Datasheet and Specifications PDF
The 2SB1392 is a Silicon PNP Transistor.
Key Specifications
| Max Operating Temp | 150 °C |
|---|
| Part Number | 2SB1392 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base . se-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=-50mA;RBE=< IC=-10µA; IE=0 IE=-10µA; IC=0 IC=-2A ;IB=-0.2A IC=-2A; IB=-0.2A IC=-1A ; VCE=-4V VCB=-50V; IE=0 VCE=-50V; RBE=< IC=-1A ; VCE=-4V IC=-0.1A ;. |
| Part Number | 2SB1392 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low . e Breakdown Voltage IC= -10μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10μA; IC= 0 VCE(sat)★ Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat)★ Base-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on)★ Base-Emitter On Voltage IC= -1A; VCE= -4V ICBO Collector Cut. |
| Part Number | 2SB1392 Datasheet |
|---|---|
| Description | Silicon PNP Transistor |
| Manufacturer | Renesas |
| Overview |
2SB1392
Silicon PNP Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220FM
ADE-208-872 (Z) 1st. Edition
September 2000
123
Absolute Maximum Ratings (Ta = 25°C)
Item Collector .
* * voltage Base to emitter saturation VBE(sat) * * voltage Notes: 1. Pulse test. 2. The 2SB1392 is grouped by hFE1 as follows. Max Unit * V * V * V *10 µA *10 200 * *1.0 V *1.0 V *1.2 V Test conditions IC = *10 µA, IE = 0 IC = *50 mA, RBE = ∞ IE = *10 µA, IC = 0 VCB = *50 V, IE = . |