| Part Number | 2SC1815 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications 2SC1815 Unit: mm High voltage and high . nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing th. |
2SC1815 Datasheet and Specifications PDF
The 2SC1815 is a Silicon NPN Transistor.
| Part Number | 2SC1815 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | JCET |
| Overview | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SC1815 TRANSISTOR (NPN) FEATURES Power dissipation MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol V. Power dissipation MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation RθJA Tj Tstg Thermal Resistance from Junction to Ambient ℃ J. |
| Part Number | 2SC1815 Datasheet |
|---|---|
| Description | SILICON NPN TRANSISTORS |
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-. 70 hFE VCE=6.0V, IC=2.0mA (2SC1815-Y) 120 hFE VCE=6.0V, IC=2.0mA (2SC1815-GR) 200 hFE VCE=6.0V, IC=2.0mA (2SC1815-BL) 350 fT VCE=10V, IC=1.0mA, f=30MHz 80 MAX 100 100 100 0.25 1.0 1.45 700 140 240 400 700 UNITS V V V mA mW °C °C/W UNITS nA nA nA V V V V V V MHz R1 (10-May 2018) 2SC1815 2S. |
| Part Number | 2SC1815 Datasheet |
|---|---|
| Description | Silicon NPN Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
·High Voltage and High Current
Vceo=50V(Min.），Ic=150mA(Max) ·Excellent hFE Linearity ·Low Noise ·Complement to Type 2SA1015(O,Y,GR class) ·Minimum Lot-to-Lot variations for robust device
performance a.
Voltage IC= 100mA ; IB= 10mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 100mA ; IB= 10mA
ICBO
Emitter Cutoff Current
VCB= 60V; IE= 0
IEBO
Collector Cutoff Current
VEB= 5V; IC= 0
hFE(1)
DC Current Gain
IC= 2mA ; VCE= 6V
hFE(2)
DC Current Gain
IC= 150mA ; VCE= 6V
fT
Current-Gain *Band. |