2SC1815-Y
Features
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- 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation. Collector-current 0.15A Collector-base Voltage 60V Marking : C1815 x
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- Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Lead Free Finish/Rohs pliant ("P"Suffix designates Ro HS pliant. See ordering information)
Operating and storage junction temperature range:-55o C to +125o C
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Collector-Emitter Breakdown Voltage- (IC=0.1m Adc, IB =0) Collector-Base Breakdown Voltage (IC=100u Adc, IE =0) Emitter-Base Breakdown Voltage (I E =100u Adc,IC=0) Collector Cutoff Current (VCB=60Vdc, IE =0Adc) Collector Cutoff Current (VCB=50Vdc, IE =0Adc) Emitter Cutoff Current (VEB =5.0Vdc, IC=0Adc) DC Current Gain- (IC=2.0m Adc, V CE=6.0Vdc) Collector-Emitter Saturation Voltage (IC=100m Adc, IB =10m Adc) Base-Emitter Saturation Voltage (IC=100m...
