| Part Number | 2SC2229 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | 2SC2229 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC2229 Black and White TV Video Output Applications High-Voltage Switching Applications Driver Stage Audio Amplifier Applica. y even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual . |
2SC2229 Datasheet and Specifications PDF
The 2SC2229 is a NPN Transistor.
Key Specifications
| Max Operating Temp | 150 °C |
|---|
| Part Number | 2SC2229 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
·High breakdown voltage ·Low output capacitance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High voltage switching applica.
ector-Emitter Saturation Voltage IC= 10mA ; IB= 1mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 10mA ; IB= 1mA
ICBO
Collector Cutoff Current
VCB= 200V; IE= 0
hFE
DC Current Gain
IC= 10mA ; VCE= 5V
fT
Current-Gain *Bandwidth Product IC= 10mA ; VCE= 30V COB Output Capacitance IE= 0 ; VCB. |
| Part Number | 2SC2229 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| Overview | Elektronische Bauelemente 2SC2229 50mA , 200V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High Breakdown Voltage High Transiti. High Breakdown Voltage High Transition Frequency TO-92MOD AD B K EF C Collector 2 3 Base 1 Emitter N GH 1 Emitter 2 Collector M 3 Base LJ REF. A B C D E F G Millimeter Min. Max. 5.50 6.50 8.00 9.00 12.70 14.50 4.50 5.30 0.35 0.65 0.30 0.51 1.50 TYP. REF. H J K L M N Millimeter Min. Max. 1.. |