| Part Number | 2SC2610 Datasheet |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview | 2SC2610 Silicon NPN Triple Diffused Application • High voltage amplifier • TV Video output Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC2610 Absolute Maximum Ratings (Ta = 25°C) Item. or to emitter saturation voltage Gain bandwidth product Collector output capacitance V(BR)EBO I CEO hFE VCE(sat) fT Cob 2 2SC2610 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 800 Collector Current IC (mA) 1.0 Typical Output Characteristics 16 14 12 10 8 0.4 6 4 0.2 2 µA . |
2SC2610 Datasheet and Specifications PDF
The 2SC2610 is a Silicon NPN Triple Diffused Transistor.
Key Specifications
| Part Number | 2SC2610 Datasheet |
|---|---|
| Description | Silicon NPN Triple Diffused Transistor |
| Manufacturer | Renesas |
| Overview |
2SC2610
Silicon NPN Triple Diffused
REJ03G0700-0200 (Previous ADE-208-1068) Rev.2.00 Aug.10.2005
Application
• High voltage amplifier • TV Video output
Outline
RENESAS Package code: PRSS0003DC-A (Pa.
VCE(sat) fT Cob Min 300 300 5 * 30 * 50 * Typ * * * * * * 80 * Max * * * 1.0 200 1.5 * 4.0 Unit V V V µA V MHz pF Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCE = 250 V, RBE = ∞ VCE = 20 V, IC = 20 mA IC = 20 mA, IB = 2 mA VCE = 20 V, IC = 20 mA VCB = 20 V, IE = 0, f = . |