| Part Number | 2SC2717 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | 2SC2216,2SC2717 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2216,2SC2717 TV Final Picture IF Amplifier Applications Unit: mm · High gain: Gpe = 33dB (typ.) (f = 45 MHz) · Good linearity. Transition frequency Power gain (Figure 1) 2SC2216 2SC2717 Symbol ICBO IEBO Test Condition VCB = 50 V, IE = 0 VCB = 30 V, IE = 0 VEB = 3 V, IC = 0 V (BR) CEO IC = 10 mA, IB = 0 hFE VCE = 12.5 V, IC = 12.5 mA VCE (sat) VBE (sat) Cob Cc･rbb’ fT Gpe IC = 15 mA, IB = 1.5 mA IC = 15 mA, IB = 1.5 . |
2SC2717 Datasheet and Specifications PDF
The 2SC2717 is a Silicon NPN Transistor.
| Part Number | 2SC2717 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | LGE |
| Overview | 1. BASE 2. EMITTER 3. COLLECTOR 2SC2717(NPN) TO-92 Bipolar Transistors TO-92 Features High Gain: Gpe =33 dB ( Typ. ) ( f =45MHZ) Good Linearity of hFE. MAXIMUM RATINGS (TA=25℃ unless otherwise note. High Gain: Gpe =33 dB ( Typ. ) ( f =45MHZ) Good Linearity of hFE. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 4V IC Collector Current -Continuous 50 mA PC C. |
| Part Number | 2SC2717 Datasheet |
|---|---|
| Description | NPN Plastic-Encapsulated Transistor |
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| Overview |
2SC2717
Elektronische Bauelemente 0.05A , 30V NPN Plastic-Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
TO-92
G H
High Gain：Gpe=33 dB(T.
* * TO-92 G H High Gain：Gpe=33 dB(Typ.)(f =45MHz) Good Linearity of hFE J A B K D Base Emitter *Collector REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 E C F Collector * Base Emitter ABSOL. |