| Part Number | 2SC3355 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·Low Noise
NF = 1.5dB TYP @ VCE=10V，IC=7mA， f=1GHz •High Power Gain ︱S21e︱2 = 9.5dB TYP @ VCE=10V，IC=20mA，f=1GHz ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APP.
.1 uA
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
0.1 uA
hFE
DC Current Gain
IC= 20mA; VCE= 10V
50 150 250
fT
Current-Gain *Bandwidth Product VCE=10V,IC=20mA,f=1GHz 6.5 GHz Cre Output Capacitance VCB=10V,IE=0mA,f=1MHz 0.65 pF | S21e |2 Insertion Power Gain NF Noise Figure hFE C. |
2SC3355 Datasheet and Specifications PDF
The 2SC3355 is a Silicon NPN RF Transistor.
Key Specifications
| Package | TO-92 |
|---|
| Part Number | 2SC3355 Datasheet |
|---|---|
| Description | NPN SILICON EPITAXIAL TRANSISTOR |
| Manufacturer | Unisonic Technologies |
| Overview |
UNISONIC TECHNOLOGIES CO., LTD
2SC3355
NPN SILICON EPITAXIAL TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER
FEATURES
* Low Noise and High Gain * High Power Gain
1 TO-92
ORDERING INFORMATION
.
* Low Noise and High Gain * High Power Gain
1 TO-92
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SC3355L-T92-B 2SC3355G-T92-B 2SC3355L-T92-K 2SC3355G-T92-K Note: Pin Assignment: B: Base E: Emitter C: Collector Package TO-92 TO-92 Pin Assignment 123 BEC BEC 2SC3355L-T92. |
| Part Number | 2SC3355 Datasheet |
|---|---|
| Description | NPN Silicon Transistor |
| Manufacturer | NEC |
| Overview |
The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic.
PACKAGE DIMENSIONS in millime.
* Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz * High Power Gain MAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz 0.5 (0.02) 1.77 MAX. (0.069 MAX.) 5.5 MAX. (0.216 MAX.) AB. |