2SC3856 Datasheet and Specifications PDF

The 2SC3856 is a SILICON POWER TRANSISTOR.

Key Specifications

Mount TypeThrough Hole
Max Operating Temp150 °C
Part Number2SC3856 Datasheet
ManufacturerSavantIC
Overview ·With TO-3PN package ·Complement to type 2SA1492 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbo. citance Transition frequency CONDITIONS IC=50mA ;IB=0 IC=5A ;IB=0.5A VCB=200V ;IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IE=0 ; VCB=10V,f=1MHz IC=0.5A ; VCE=12V 50 MIN 180 2SC3856 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE COB fT TYP. MAX UNIT V 2.0 100 100 180 300 20 V µA µA pF MHz Switching times ton ts.
Part Number2SC3856 Datasheet
DescriptionSilicon NPN Transistor
ManufacturerSanken
Overview 2SC3856 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492) Application : Audio and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO 200 V . 1.8typ 0.6typ 5.45±0.1 5.45±0.1 1.4 BCE Weight : Approx 6.0g a. Part No. b. Lot No. Collector Current IC(A) 1A I C
* V CE Characteristics (Typical) 15 700mA 500mA 300mA 200mA 10 100mA 5 50mA IB=20mA 0 0 1 2 3 4 Collector-Emitter Voltage VCE(V) Collector-Emitter Saturation V.
Part Number2SC3856 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=180V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1492 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation A. r Saturation Voltage IC= 5.0A; IB= 0.5A ICBO Collector Cutoff Current VCB= 200V ; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 3A ; VCE= 4V COB Output Capacitance IE= 0 ; VCB= 10V;ftest= 1.0MHz fT Current-Gain
*Bandwidth Product IE=-0.5A ; VCE= 12V Switchin.

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500+ : 1.90664 USD
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