2SC3875 Datasheet and Specifications PDF

The 2SC3875 is a NPN Epitaxial Silicon Transistor.

Key Specifications

Part Number2SC3875 Datasheet
ManufacturerElite
Overview 2SC3875 NPN Epitaxial Silicon Transistor GENERAL PURPOSE TRANSISTOR SOT-23 Collector-Emitter Voltage: VCEO = 50V Collector Dissipation: PC = 150mW Absolute Maximum Ratings (TA=25oC) Characteristi. B= 60V, IE= 0 VCE= 45V, IB= 0 VEB= 5V, IC= 0 VCE= 6V, IC= 2mA IC= 100mA, IB= 10mA IC= 100mA, IB= 10mA VCE= 10V, IC= 1mA f= 100MHz Min Max Unit 60 V 50 V 5V 0.1 µA 0.2 µA 0.1 µA 70 700 0.25 V 1V 80 MHz hFE CLASSIFICATION Classification G hFE 70-140 Y 120-240 GR 200-400 BL 350-700 Device Mark.
Part Number2SC3875 Datasheet
DescriptionNPN Silicon Epitaxial Planar Transistor
ManufacturerSEMTECH
Overview ST 2SC3875 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On speci. Transition Frequency at VCE=10V, IC=1mA Collector Output Capacitance at VCB=10V, f=1MHz Noise Figure at VCE=6V, IC=0.1mA at f=1KHz, RG=10KΩ Symbol hFE hFE hFE hFE VCE(sat) ICBO IEBO fT COB NF Min. 70 120 200 350 80 - - G S P FORM A IS AVAILABLE Typ. 0.1 2 1 Max. 140 240 400 700 0.25 0.1 0.1 3..
Part Number2SC3875 Datasheet
DescriptionNPN Silicon Epitaxial Planar Transistor
ManufacturerBluecolour
Overview 2SC3875 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special . rent at VCB=60V Emitter Cutoff Current at VEB=5V Transition Frequency VCE(sat) ICBO IEBO - 0.1 0.25 V - 0.1 μA - 0.1 μA at VCE=10V, IC=1mA Collector Output Capacitance fT 80 - - MHz at VCB=10V, f=1MHz Noise Figure COB - 2 3.5 pF at VCE=6V, IC=0.1mA f=1KHz, RG=10KΩ NF - 1 10 dB Page.

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