| Part Number | 2SC5508 Datasheet |
|---|---|
| Manufacturer | NEC |
| Overview |
PRELIMINARY DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5508
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
FEATURES
• Ideal for low-noise, high-g.
* Ideal for low-noise, high-gain amplification applications * NF = 1.1 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA * Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20 mA * fT = 25 GHz technology * Flat-lead 4-pin thin super mini-mold (t = 0.59 mm) ORDERING INFOR. |
2SC5508 Datasheet and Specifications PDF
The 2SC5508 is a NPN TRANSISTOR.
Key Specifications
| Max Operating Temp | 150 °C |
|---|
| Part Number | 2SC5508 Datasheet |
|---|---|
| Description | NPN SILICON RF TRANSISTOR |
| Manufacturer | Unisonic Technologies |
| Overview |
The UTC 2SC5508 is an NPN silicon RF transistor, it uses UTC’s advanced technology to provide customers with low-noise, etc.
The UTC 2SC5508 is suitable for low-noise, high-gain amplification applicat.
* Maximum available power gain: MAG=19dB TYP. @ VCE=2V, IC=20mA, f=2GHz
* fT=25GHz technology adopted
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SC5508L-x-AL6-R 2SC5508G-x-AL6-R SOT-363 Note: Pin Assignment: E: Emitter B: Base C: Collector Pin Assignment 123456 . |
| Part Number | 2SC5508 Datasheet |
|---|---|
| Description | NPN SILICON RF TRANSISTOR |
| Manufacturer | Renesas |
| Overview |
Summary First edition issued Renesas format is applied to this data sheet. ORDERING INFORMATION is modified. Up to date S-PARAMETERS. .
* * * * * Ideal for low-noise, high-gain amplification applications NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum available power gain: MAG = 19 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz fT = 25 GHz technology adopted Flat-lead 4-pin thin-type super minimold (M04) pack. |