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2SC5508 - NPN SILICON RF TRANSISTOR

General Description

The UTC 2SC5508 is an NPN silicon RF transistor, it uses UTC’s advanced technology to provide customers with low-noise, etc.

The UTC 2SC5508 is suitable for low-noise, high-gain amplification applications.

Key Features

  • Maximum available power gain: MAG=19dB TYP. @ VCE=2V, IC=20mA, f=2GHz.
  • fT=25GHz technology adopted.

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UNISONIC TECHNOLOGIES CO., LTD 2SC5508 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON RF TRANSISTOR „ DESCRIPTION The UTC 2SC5508 is an NPN silicon RF transistor, it uses UTC’s advanced technology to provide customers with low-noise, etc. The UTC 2SC5508 is suitable for low-noise, high-gain amplification applications. „ FEATURES * Maximum available power gain: MAG=19dB TYP.