| Part Number | 2SD1134 Datasheet |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SD1133, 2SD1134
Silicon NPN Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SB857 and 2SB858
Outline
TO-220AB
1
2 3
1. Base 2. Collector (Flange) 3. Emitter
A.
onditions I C = 10 µA, IE = 0 I C = 50 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 50 V, IE = 0 VCE = 4V I C = 1 A*2 I C = 0.1 A*2 I C = 2 A, IB = 0.2 A*2 VCE = 4 V, IC = 1 A*2 VCE = 4 V, IC = 0.5 A*2
Min 70 50 5 * 60 35 * * * Typ * * * * * * * * 7 DC current transfer ratio hFE1* hFE2 Collector to emit. |
2SD1134 Datasheet and Specifications PDF
The 2SD1134 is a NPN TRANSISTOR.
| Part Number | 2SD1134 Datasheet |
|---|---|
| Description | (2SD1133 / 2SD1134) SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220C package ·Complement to type 2SB857/858 APPLICATIONS ·For low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absol. CONDITIONS 2SD1133 2SD1134 SYMBOL MIN 50 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 60 70 5 1.0 1.0 1 60 35 7 MHz 320 V V V V µA V(BR)CBO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 fT Collector-base breakdown voltage Emitter-base breakdown votage Collector-. |
| Part Number | 2SD1134 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector Current: IC= 4A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 2A ·High Collector Power Dissipation ·Complement to Type 2SB858 ·Minimum Lot-to-Lot variations for robust device . ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10μA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 1A ; VCE= 4V ICBO Collector Cutoff Current VCB= 50V ; IE= 0 hFE-1 DC C. |
| Part Number | 2SD1134 Datasheet |
|---|---|
| Description | Silicon NPN Transistor |
| Manufacturer | Renesas |
| Overview |
2SD1133, 2SD1134
Silicon NPN Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SB857 and 2SB858
Outline
TO-220AB
ADE-208-905 (Z) 1st. Edition
September 2000
1 23
Ab.
(BR)CEO
50
* * 60 * * V IC = 50 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 * *5 * *V IE = 10 µA, IC = 0 Collector cutoff current ICBO * *1 * *1 µA VCB = 50 V, IE = 0 DC current transfer ratio hFE1*1 60 * 320 60 * 320 VCE = 4V IC = 1 A*2 hFE2 35 * * 35 * * IC = 0.1. |