| Part Number | 2SD1136 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for . Emitter Breakdown Voltage IC= 10mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A ICES Collector. |
2SD1136 Datasheet and Specifications PDF
The 2SD1136 is a NPN Transistor.
| Part Number | 2SD1136 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220C package ·High collector-base breakdown voltage : VCBO=200V(min) APPLICATIONS ·For power switching and TV vertical deflection output applications PINNING PIN 1 2 3 Base Collector;connect. ion voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain CONDITIONS IC=50mA; IB=0 IE=1mA; IC=0 IC=4 A;IB=0.4 A IC=4 A;IB=0.4 A VCE=200V; IB=0 VEB=5V; IC=0 IC=4A ; VCE=5V 20 MIN 80 5 1.5 1.5 50 50 TYP. MAX UNIT V V V V SYMBOL V(BR)CEO V(BR)EBO V. |
| Part Number | 2SD1136 Datasheet |
|---|---|
| Description | Silicon NPN Transistor |
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SD1136
Silicon NPN Triple Diffused
Application
Power switching TV horizontal deflection output
Outline
TO-220AB
1 23
1. Base 2. Collector
(Flange) 3. Emitter
2SD1136
Absolute Maximum Ratings (Ta.
st.
tf * Typ * * * * * * * * Max * * * 1.0 * 1.5 1.5 1.0 Unit V Test conditions IC = 1 mA, IE = 0 V IC = 10 mA, RBE = ∞ V IE = 1 mA, IC = 0 mA VCE = 150 V, RBE = 0 VCE = 5 V, IC = 4 A*1 V IC = 4 A, IB = 0.4 A*1 V IC = 4 A, IB = 0.4 A*1 µs IC = 3.5 A, IB1 = 0.45 A, LB = 0 2 DC current tra. |