| Part Number | 2SD1137 Datasheet |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview | 2SD1137 Silicon NPN Triple Diffused Application Low frequency power amplifier TV vertical deflection output complementary pair with 2SB860 Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. . EO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio V(BR)EBO I CEO I EBO hFE Maximum Collector Dissipation Curve 60 Collector power dissipation PC (W) 10 Area of Safe Operation (10 V, 4 A) Collector current IC (A) 3 1.0 0.3 0.1 (10. |
2SD1137 Datasheet and Specifications PDF
The 2SD1137 is a NPN TRANSISTOR.
| Part Number | 2SD1137 Datasheet |
|---|---|
| Description | Silicon NPN Transistor |
| Manufacturer | Renesas |
| Overview |
2SD1137
Silicon NPN Triple Diffused
ADE-208-907 (Z) 1st. Edition
September 2000 Application
Low frequency power amplifier TV vertical deflection output complementary pair with 2SB860
Outline
TO-220AB
.
ector to emitter saturation VCE (sat) * * voltage Note: 1. Pulse test. Max Unit * V * V 100 µA 50 µA 250 350 1.0 V Test conditions IC = 10 mA, RBE = ∞ IE = 1 mA, IC = 0 VCE = 80 V, RBE = ∞ VEB = 3.5 V, IC = 0 VCE = 4 V IC = 0.5 A*1 IC = 50 mA IC = 1 A, IB = 0.1 A Collector pow. |
| Part Number | 2SD1137 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SB860 ·Minimum Lot-to-Lot variations for robust device performance and reliable oper. mitter Breakdown Voltage IC= 10mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A ICEO Collector Cutoff Current VCE= 80V; RBE= ∞ IEBO Emitter Cutoff Current VEB= 3.5V; IC= 0 hFE-1 DC Current Gain IC= 500mA; VCE. |
| Part Number | 2SD1137 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220C package ·Complement to type 2SB860 APPLICATIONS ·Low frequency power amplifier TV vertical deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emit. ut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=50mA; RBE=9 IE=1mA; IC=0 IC=1 A;IB=0.1 A VCE=80V; RBE=9 VEB=3.5V; IC=0 IC=0.5A ; VCE=4V IC=50mA ; VCE=4V 50 25 MIN 100 4 1.0 100 50 250 350 TYP. MAX UNIT V V V SYMBOL V(BR)CEO V(BR)EBO VCEsat ICEO IEBO hFE-1 hFE-. |