2SD1762 Datasheet and Specifications PDF

Power Transistor(50V,3A ) FEATURES  Low VCE(sat) VCE(sat)=0.5V(Typ)（IC/IB=2A/0.2A）  Complements the 2SB1185. Pb Lead-free Production specification 2SD1762 TO-220AB MAXIMUM RATING operating tempe.

* Low VCE(sat) VCE(sat)=0.5V(Typ)（IC/IB=2A/0.2A）
* Complements the 2SB1185. Pb Lead-free Production specification 2SD1762 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO VEBO IC PC Tj,.

·With TO-220Fa package ·Low collector saturation voltage ·Complement to type 2SB1185 APPLICATIONS ·For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter F.

uration voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=1mA , IB=0 IC=50µA , IE=0 IE=50µA , IC=0 IC=2A ;IB=0.2A IC=2A ;IB=0.2A VCB=40V IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=3V IE=-0.5A ; VCE=5V;.

Transistors Power Transistor (50V, 3A) 2SD1760 / 2SD1864 / 2SD1762 FFeatures 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185. FStructure E.

1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185. FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) (96-214-D57) 264 Transistors FAbsolute maximum ratings (Ta = 25_C) 2SD1760 / 2SD1864 / 2SD1762 F.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD1762 TRANSISTOR (NPN) FEATURES z Low VCE(sat) z Complements the 2SB1185 TO – 220 1. BASE 2. COLLECTOR 3. .

z Low VCE(sat) z Complements the 2SB1185 TO
* 220 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation.