2SD2015 Datasheet

The 2SD2015 is a SILICON POWER TRANSISTOR.

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Part Number2SD2015
ManufacturerSavantIC
Overview ·With TO-220F package ·DARLINGTON APPLICATIONS ·Driver for solenoid,relay and motor and general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and sym. Transition frequency Collector output capacitance CONDITIONS IC=10mA ;IB=0 IC=2A ;IB=2mA IC=2A ;IB=2mA VCB=150V; IE=0 VEB=6V; IC=0 IC=2A ; VCE=2V IC=0.1A ; VCE=12V f=1MHz;VCB=10V 2000 MIN 120 www.datasheet4u.com 2SD2015 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V 1.5 2..
Part Number2SD2015
DescriptionSilicon NPN Transistor
ManufacturerSanken
Overview 2SD2015 Darlington Equivalent C circuit B (3kΩ) (500Ω) E Silicon NPN Triple Diffused Planar Transistor Application : Driver for Solenoid, Relay and Motor and General Purpose sAbsolute maximum rati. 2 13.0min 1.35±0.15 1.35±0.15 2.54 0.85 +0.2 -0.1 2.54 0.45 +0.2 -0.1 2.4±0.2 2.2±0.2 Weight : Approx 2.0g a. Part No. BCE b. Lot No. Collector Current IC(A) 125˚C (Case Temp) 25˚C (Case Temp)
*30˚C (Case Temp) Collector-Emitter Saturation Voltage VCE(sat)(V) Collector Current IC(A.
Part Number2SD2015
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A ·High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V ·Minimum Lot-t. PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 2mA VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 2mA ICBO Collector Cutoff Current VCB= 150V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC.