Part Number	2SJ527L
Manufacturer	Hitachi Semiconductor
Overview	2SJ527(L),2SJ527(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-640A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.3 Ω typ. • Low drive current • 4 V gete drive. * Low on-resistance R DS(on) = 0.3 Ω typ. * Low drive current * 4 V gete drive devices * High speed switching Outline DPAK-1 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ527(L),2SJ527(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage.