Datasheet4U Logo Datasheet4U.com

2SJ527S - Hight Speed Power Switching

Key Features

  • Low on-resistance RDS(on) = 0.3 typ. Low drive current High speed switching 4V gate drive devices. +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 3.80 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 max 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 +0.15 0.50 -0.15 +0.28 1.50 -0.1 +0.25 2.65 -0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pu.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SJ527S P-Channel MOSFET Hitachi Semiconductor
2SJ527S P-Channel MOSFET Renesas
2SJ527 P-Channel MOSFET Renesas
2SJ527 P-Channel MOSFET Hitachi Semiconductor
2SJ527L P-Channel MOSFET Hitachi Semiconductor

Other Datasheets by Kexin Semiconductor

Part Number Description
2SJ528S Hight Speed Power Switching
2SJ529S Hight Speed Power Switching
2SJ506S P-Channel MOSFET
2SJ530S Hight Speed Power Switching
2SJ598 MOS Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type Hight Speed Power Switching 2SJ527S MOSFICET Features Low on-resistance RDS(on) = 0.3 typ. Low drive current High speed switching 4V gate drive devices. +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 3.80 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 max 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 +0.15 0.50 -0.15 +0.28 1.50 -0.1 +0.25 2.65 -0.