| Part Number | 2SJ527S Datasheet |
|---|---|
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type Hight Speed Power Switching 2SJ527S MOSFICET Features Low on-resistance RDS(on) = 0.3 typ. Low drive current High speed switching 4V gate drive devices. +0.2 9.70 -0.2 TO-252 6.50+0.15 . Low on-resistance RDS(on) = 0.3 typ. Low drive current High speed switching 4V gate drive devices. +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 3.80 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 max 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 +0. |
2SJ527S Datasheet and Specifications PDF
The 2SJ527S is a Hight Speed Power Switching.
| Part Number | 2SJ527S Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SJ527(L),2SJ527(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-640A (Z) 2nd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.3 Ω typ. • Low drive current • 4 V gete drive.
* Low on-resistance R DS(on) = 0.3 Ω typ. * Low drive current * 4 V gete drive devices * High speed switching Outline DPAK-1 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ527(L),2SJ527(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage. |
| Part Number | 2SJ527S Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | Renesas |
| Overview |
High speed power switching
REJ03G0877-0300 (Previous: ADE-208-640A)
Rev.3.00 Sep 07, 2005
Features
• Low on-resistance RDS (on) = 0.3 Ω typ.
• Low drive current • 4 V gate drive devices • High speed.
* Low on-resistance RDS (on) = 0.3 Ω typ. * Low drive current * 4 V gate drive devices * High speed switching Outline RENESAS Package code: PRSS0004ZD-A (Package name: DPAK (L)-(1) ) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 D 123 123 G S 1. Gate 2. Drain 3. Source 4. Dra. |