| Part Number | 2SJ529S Datasheet |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SJ529(L),2SJ529(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-654A (Z) 2nd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.12 Ω typ. • 4 V gete drive devices • High spe.
* Low on-resistance R DS(on) = 0.12 Ω typ. * 4 V gete drive devices * High speed switching Outline DPAK *2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ529(L),2SJ529(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drai. |
2SJ529S Datasheet and Specifications PDF
The 2SJ529S is a Silicon P-Channel MOSFET.
| Part Number | 2SJ529S Datasheet |
|---|---|
| Description | Hight Speed Power Switching |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type Hight Speed Power Switching 2SJ529S MOSFICET Features Low on-resistance RDS(on) = 0.12 typ. High speed switching 4V gate drive devices. +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0. Low on-resistance RDS(on) = 0.12 typ. High speed switching 4V gate drive devices. +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 3.80 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 max 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 +0.15 0.50 -0.15 +0. |
| Part Number | 2SJ529S Datasheet |
|---|---|
| Description | P-Channel 60V MOSFET |
| Manufacturer | VBsemi |
| Overview |
2SJ529S-VB
2SJ529S-VB Datasheet
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 60
0.061 at V GS = - 10 V
0.072 at VGS = - 4.5 V
ID (A) - 30 - 25
Qg (Typ) 10
TO-252
FEATUR.
* Trench Power MOSFET * 100 % UIS Tested APPLICATIONS * Load Switch S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C) TC = 25 . |
| Part Number | 2SJ529S Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc P-Channel MOSFET Transistor
·FEATURES ·With TO-220F packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable op.
*With TO-220F packaging *High speed switching *Easy to use *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor 2SJ529S *APPLICATIONS *Power supply *DC-DC converters *Motor control *Switching applications *ABSOLUTE MAXIM. |