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2SJ529 Datasheet Silicon P-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SJ529(L),2SJ529(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-654A (Z) 2nd.

Key Features

  • Low on-resistance R DS(on) = 0.12 Ω typ.
  • 4 V gete drive devices.
  • High speed switching Outline DPAK.
  • 2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ529(L),2SJ529(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS V.

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