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2SJ529L - Silicon P-Channel MOSFET

Key Features

  • Low on-resistance R DS(on) = 0.12 Ω typ.
  • 4 V gete drive devices.
  • High speed switching Outline DPAK.
  • 2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ529(L),2SJ529(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS V.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SJ529 Silicon P-Channel MOSFET
2SJ529S Silicon P-Channel MOSFET
2SJ526 Silicon P-Channel MOSFET
2SJ527 P-Channel MOSFET
2SJ527L P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SJ529(L),2SJ529(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-654A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.12 Ω typ. • 4 V gete drive devices • High speed switching Outline DPAK–2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ529(L),2SJ529(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings –60 ±20 –10 –40 –10 –10 8.5 20 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.