2SK2484 Datasheet and Specifications PDF

The 2SK2484 is a MOS Field Effect Transistors.

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Part Number2SK2484 Datasheet
ManufacturerKexin Semiconductor
Overview SMD Type TransistIoCrs MOS Field Effect Transistors 2SK2484 Features Low On-state Resistance:RDS(on)=2.8 max.(VGS=10V,ID=3.0A) Low Ciss Ciss=1200pF TYP High Avalanche Capability Ratings + 8 .7 0.2. Low On-state Resistance:RDS(on)=2.8 max.(VGS=10V,ID=3.0A) Low Ciss Ciss=1200pF TYP High Avalanche Capability Ratings + 8 .7 0.2 -0.2 + 1 .2 7 0.1 -0.1 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm 5.60 + 0 .2 -0.2 5 2 1.27+0.1 -0.1 0.1max . 5 1 + 5 .2 8 0.2 -0.2 Absolute Maximum Ra.
Part Number2SK2484 Datasheet
DescriptionN-Channel 900V Power MOSFET
ManufacturerVBsemi
Overview 2SK2484-VB 2SK2484-VB Datasheet N-Channel 900V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 900 VGS = 10 V .
* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* Isolated Central Mounting Hole
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
* Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT TO-220AB D G GD S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC .
Part Number2SK2484 Datasheet
DescriptionN-CHANNEL POWER MOSFET
ManufacturerNEC
Overview The 2SK2484 is N-Channel MOS Field Effect Transistor de- signed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 3.0 ± 0.3 6.0 MAX. 5.9 MIN. 12.7 MIN. 15.5 MAX. FEATURES.
* Low On-Resistance RDS(on) = 2.8 Ω (VGS = 10 V, ID = 3.0 A)
* Low Ciss Ciss = 1 200 pF TYP.
* High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS 900 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID(DC) ±5.0 A Drain Current (pu.
Part Number2SK2484 Datasheet
DescriptionN-CHANNEL POWER MOSFET
ManufacturerRenesas
Overview The 2SK2484 is N-Channel MOS Field Effect Transistor de- signed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 3.0 ± 0.3 6.0 MAX. 5.9 MIN. 12.7 MIN. 15.5 MAX. FEATURES.
* Low On-Resistance RDS(on) = 2.8 Ω (VGS = 10 V, ID = 3.0 A)
* Low Ciss Ciss = 1 200 pF TYP.
* High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS 900 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID(DC) ±5.0 A Drain Current (pu.