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2SK2484 - MOS Field Effect Transistors

Key Features

  • Low On-state Resistance:RDS(on)=2.8 max. (VGS=10V,ID=3.0A) Low Ciss Ciss=1200pF TYP High Avalanche Capability Ratings + 8 .7 0.2 -0.2 + 1 .2 7 0.1 -0.1 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm 5.60 + 0 .2 -0.2 5 2 1.27+0.1 -0.1 0.1max . 5 1 + 5 .2 8 0.2 -0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(pulse).
  • 1 Total Power Dissipation Ta = 25 Total Power Dissipation TC = 25 Channel Temperature.

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SMD Type TransistIoCrs MOS Field Effect Transistors 2SK2484 Features Low On-state Resistance:RDS(on)=2.8 max.(VGS=10V,ID=3.0A) Low Ciss Ciss=1200pF TYP High Avalanche Capability Ratings + 8 .7 0.2 -0.2 + 1 .2 7 0.1 -0.1 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm 5.60 + 0 .2 -0.2 5 2 1.27+0.1 -0.1 0.1max . 5 1 + 5 .2 8 0.2 -0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(pulse) *1 Total Power Dissipation Ta = 25 Total Power Dissipation TC = 25 Channel Temperature Storage temperature Single Avalanche Current *2 Single Avalanche Energy *2 *1. PW 10ìs,Dduty cycle 1%. *2.Starting Tch=25 ,RG=25Ù,VGS=20V 0 +0.2 2.54-0.2 +0.1 5.08-0.1 0.81+0.1 -0.1 2.