2SK2484 - N-CHANNEL POWER MOSFET

Renesas

General Description

signed for high voltage switching applications.

3.0 ± 0.3 6.0 MAX.

5.9 MIN.

Key Features

Low On-Resistance RDS(on) = 2.8 Ω (VGS = 10 V, ID = 3.0 A).
Low Ciss Ciss = 1 200 pF TYP.
High Avalanche Capability Ratings.

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2SK2484 n-channel power mosfet by Renesas - Datasheet Preview

Datasheet Details

Part number	2SK2484
Manufacturer	Renesas
File Size	258.05 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	2SK2484 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2484 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2484 is N-Channel MOS Field Effect Transistor de- signed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 3.0 ± 0.3 6.0 MAX. 5.9 MIN. 12.7 MIN. 15.5 MAX. FEATURES • Low On-Resistance RDS(on) = 2.8 Ω (VGS = 10 V, ID = 3.0 A) • Low Ciss Ciss = 1 200 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS 900 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID(DC) ±5.0 A Drain Current (pulse)* ID(pulse) ±10 A Total Power Dissipation (Tc = 25 ˚C) PT1 75 W Total Power Dissipation (TA = 25 ˚C) PT2 1.