Datasheet4U Logo Datasheet4U.com

2SK2485 - N-Channel MOSFET

General Description

The 2SK2485 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

4.7 MAX.

1.5 7.0 1.0±0.2 5.45 4.5±0.2 0.6±0.1 2.8±0.1 1.

RDS (on) = 2.8 Ω (VGS = 10 V, ID = 3.

Key Features

  • 15.7 MAX. 4 3.2±0.2.
  • Low Ciss Ciss = 1 200 pF TYP.
  • High Avalanche Capability Ratings.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK2485 N-Channel MOSFET INCHANGE
2SK2480 MOS FIELD EFFECT TRANSISTOR Renesas
2SK2481 MOS Field Effect Transistors Kexin
2SK2484 MOS Field Effect Transistors Kexin
2SK2484 N-Channel 900V Power MOSFET VBsemi

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SK2480 N-Channel MOSFET
2SK2481 N-Channel MOSFET
2SK2482 N-Channel MOSFET
2SK2483 N-Channel MOSFET
2SK2484 N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2485 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2485 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) 4.7 MAX. 1.5 7.0 1.0±0.2 5.45 4.5±0.2 0.6±0.1 2.8±0.1 1. Gate 2. Drain 3. Source 4. Fin (Drain) • Low On-Resistance RDS (on) = 2.8 Ω (VGS = 10 V, ID = 3.0 A) 1.0 FEATURES 15.7 MAX. 4 3.2±0.2 • Low Ciss Ciss = 1 200 pF TYP.