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2SK2481 - MOS Field Effect Transistors

Key Features

  • Low On-state Resistance:RDS(on)=4 max. (VGS=10V,ID=2.0A) Low Ciss Ciss=900pF TYP High Avalanche Capability Ratings + 5 .2 8 0.2 -0.2 + 8 .7 0.2 -0.2 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm + 1 .2 7 0.1 -0.1 5.60 + 0 .2 -0.2 5 1.27+0.1 -0.1 0.1max +0.2 2.54-0.2 +0.1 5.08-0.1 0.81+0.1 -0.1 2.54 + 2 .5 4 0.2 -0.2 0.4+0.2 -0.2 1 5 . 2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Dra.

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SMD Type TransistIoCrs MOS Field Effect Transistors 2SK2481 Features Low On-state Resistance:RDS(on)=4 max.(VGS=10V,ID=2.0A) Low Ciss Ciss=900pF TYP High Avalanche Capability Ratings + 5 .2 8 0.2 -0.2 + 8 .7 0.2 -0.2 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm + 1 .2 7 0.1 -0.1 5.60 + 0 .2 -0.2 5 1.27+0.1 -0.1 0.1max +0.2 2.54-0.2 +0.1 5.08-0.1 0.81+0.1 -0.1 2.54 + 2 .5 4 0.2 -0.2 0.4+0.2 -0.2 1 5 . 2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(pulse) *1 Total Power Dissipation Ta = 25 Total Power Dissipation TC = 25 Channel Temperature Storage temperature Single Avalanche Current *2 Single Avalanche Energy *2 *1. PW 10ìs,Dduty cycle 1%. *2.