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2SK2481 - N-Channel MOSFET

General Description

The 2SK2481 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

10.6 MAX.

3.6 ± 0.2 10.0 5.9 MIN.

Key Features

  • Low On-Resistance RDS(on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A) 6.0 MAX.
  • Low Ciss Ciss = 900 pF TYP.
  • High Avalanche Capability Ratings.

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Other Datasheets by NEC (now Renesas Electronics)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2481 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2481 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. 3.0 ± 0.3 PACKAGE DIMENSIONS (in millimeters) 10.6 MAX. 3.6 ± 0.2 10.0 5.9 MIN. 12.7 MIN. 15.5 MAX. 4.8 MAX. 1.3 ± 0.2 FEATURES • Low On-Resistance RDS(on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A) 6.0 MAX. • Low Ciss Ciss = 900 pF TYP.