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2SK2482 - N-Channel MOSFET

General Description

The 2SK2482 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

4.7 MAX.

Key Features

  • Low On-Resistance RDS (on) = 4.0 Ω (VGS = 10 V, ID = 3.0 A) 1.0 15.7 MAX. 4 3.2±0.2 1 2 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2482 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2482 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) 4.7 MAX. 1.5 FEATURES • Low On-Resistance RDS (on) = 4.0 Ω (VGS = 10 V, ID = 3.0 A) 1.0 15.7 MAX. 4 3.2±0.2 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID (DC) ID (pulse) PT1 PT2 Tch Tstg IAS EAS 900 ± 30 ± 5.0 ± 12 100 3.0 150 5.0 73.