| Part Number | 2SK2925 Datasheet |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-549C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS =0.060 Ω typ. • High speed switching • 4V gate driv.
* Low on-resistance R DS =0.060 Ω typ. * High speed switching * 4V gate drive device can be driven from 5V source Outline DPAK *2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2925(L),2SK2925(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source . |
2SK2925 Datasheet and Specifications PDF
The 2SK2925 is a Silicon N-Channel MOSFET.
Key Specifications
| Package | DPAK |
|---|---|
| Mount Type | Surface Mount |
| Pins | 4 |
| Height | 2.5 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | 2SK2925 Datasheet |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Manufacturer | Renesas |
| Overview |
2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 0.060 Ω typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
.
* Low on-resistance RDS = 0.060 Ω typ. * High speed switching * 4 V gate drive device can be driven from 5 V source Outline REJ03G1039-0500 (Previous: ADE-208-454B) Rev.5.00 Sep 07, 2005 RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2)) 4 RENESAS Package code: PRSS0004ZD-C (Package n. |