2SK3070 Datasheet and Specifications PDF

The 2SK3070 is a N-Channel MOSFET.

Key Specifications

Mount TypeThrough Hole
Pins4
Height4.64 mm
Max Operating Temp150 °C
Min Operating Temp-55 °C
Part Number2SK3070 Datasheet
ManufacturerHitachi Semiconductor
Overview 2SK3070(L),2SK3070(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-684G (Z) 8th. Edition February 1999 Features • Low on-resistance R DS(on) = 4.5 mΩ typ. • Low drive current • 4 V ga.
* Low on-resistance R DS(on) = 4.5 mΩ typ.
* Low drive current
* 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S Datasheet Title Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source volt.
Part Number2SK3070S Datasheet
DescriptionN-Channel MOSFET
ManufacturerHitachi Semiconductor
Overview 2SK3070(L),2SK3070(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-684G (Z) 8th. Edition February 1999 Features • Low on-resistance R DS(on) = 4.5 mΩ typ. • Low drive current • 4 V ga.
* Low on-resistance R DS(on) = 4.5 mΩ typ.
* Low drive current
* 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S Datasheet Title Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source volt.
Part Number2SK3070L Datasheet
DescriptionN-Channel MOSFET
ManufacturerHitachi Semiconductor
Overview 2SK3070(L),2SK3070(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-684G (Z) 8th. Edition February 1999 Features • Low on-resistance R DS(on) = 4.5 mΩ typ. • Low drive current • 4 V ga.
* Low on-resistance R DS(on) = 4.5 mΩ typ.
* Low drive current
* 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S Datasheet Title Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source volt.

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