4N60 Datasheet PDF

The 4N60 is a N-Channel Mosfet Transistor.

4N60 integrated circuit image
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Part Number4N60 Datasheet
ManufacturerInchange Semiconductor
Overview ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General . Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=4.4A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=2.2A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0.
Part Number4N60 Datasheet
DescriptionN-Channel Power MOSFET
ManufacturerNell Power Semiconductor
Overview The Nell 4N60 is a three-terminal silicon device with current conduction capability of 4A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage o. RDS(ON) = 2.5Ω@VGS = 10V Ultra low gate charge(20nC max.) Low reverse transfer capacitance (CRSS = 8pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D G DS TO-251 (I-PAK) (4N60F) D D G S TO-252 (D-PAK) (4N60G) GDS TO-220AB.
Part Number4N60 Datasheet
DescriptionN-CHANNEL POWER MOSFET
ManufacturerUnisonic Technologies
Overview The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara. * RDS(ON) ≤ 2.5 Ω @ VGS = 10 V, ID = 2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness
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Part Number4N60 Datasheet
DescriptionSurface Mount N-Channel Power MOSFET
ManufacturerWEITRON
Overview The WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara. 2 DRAIN * * RDS(ON) =2.5 Ohms @VGS Ultra low gate charge =10V * Low reverse transfer Capacitance 1 GATE * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness 3 SOURCE DRAIN CURRENT 4 AMPERES DRAIN SOURCE VOLTAGE 600 VOLTAGE D-PAK3/(TO-251) .