AO4407A Datasheet and Specifications PDF

The AO4407A is a 30V P-Channel MOSFET.

AO4407A integrated circuit image
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Part NumberAO4407A Datasheet
ManufacturerAlpha & Omega Semiconductors
Overview The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.. nction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State RqJA 32 60 Maximum Junction-to-Lead C Steady State RqJL 17 Max 40 75 24 Rev.11.1 March 2024 Units V V A mJ W °C Units °C/W °C/W °C/W Page1 of 5 AO4407A Electrical Characteristics (TJ=25°C unless otherw.
Part NumberAO4407A Datasheet
DescriptionP-Channel MOSFET
ManufacturerKexin Semiconductor
Overview SMD Type P-Channel MOSFET AO4407A (KO4407A) ■ Features ● VDS (V) =-30V ● ID =-12 A (VGS =-20V) ● RDS(ON) < 11mΩ (VGS =-20V) ● RDS(ON) < 13mΩ (VGS =-10V) ● RDS(ON) < 17mΩ (VGS =-6V) +0.04 0.21 -0.02.
* VDS (V) =-30V
* ID =-12 A (VGS =-20V)
* RDS(ON) < 11mΩ (VGS =-20V)
* RDS(ON) < 13mΩ (VGS =-10V)
* RDS(ON) < 17mΩ (VGS =-6V) +0.04 0.21 -0.02 SOP-8 D MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain G S
* Absolute Maximum Ratings Ta = 25℃ Drain-Source Vol.
Part NumberAO4407A Datasheet
DescriptionP-Channel MOSFET
ManufacturerFreescale Semiconductor
Overview The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.. VDS = -30V ID = -12A (VGS = -20V) RDS(ON) < 11mΩ (VGS = -20V) RDS(ON) < 13mΩ (VGS = -10V) RDS(ON) < 17mΩ (VGS = -6V) SOIC-8 D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current .
Part NumberAO4407A Datasheet
DescriptionP-Channel MOSFET
ManufacturerVBsemi
Overview AO4407A AO4407A Datasheet P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.018 at VGS = - 10 V 0.024 at VGS = - 4.5 V ID (A)d - 9.0 - 7.8 Qg (Typ.) 13 n.
* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg Tested APPLICATIONS
* Load Switch
* Battery Switch S SO-8 S1 S2 S3 G4 Top View 8D 7D 6D 5D G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Sourc.