AO4430 Datasheet

The AO4430 is a 30V N-Channel MOSFET.

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Part NumberAO4430
ManufacturerAlpha & Omega Semiconductors
Overview The AO4430 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a lo. ction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RqJA RqJL G S Maximum 30 ±20 18 15 80 3 2.1 30 135 -55 to 150 Typ Max 31 40 59 75 16 24 Units V V A W A mJ °C Units °C/W °C/W °C/W Rev.6.1: August 2023 www.aosmd.com Page 1 of 5 AO4430 Electrical Characteristics (TJ=25°C unle.
Part NumberAO4430
DescriptionN-Channel MOSFET
ManufacturerVBsemi
Overview AO4430 AO4430 Datasheet N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.004 at VGS = 10 V 0.005 at VGS = 4.5 V ID (A)a 18 16 Qg (Typ.) 6.8 nC S1 S2 S3 G.
* Halogen-free
* TrenchFET® Power MOSFET
* Optimized for High-Side Synchronous Rectifier Operation
* 100 % Rg Tested
* 100 % UIS Tested APPLICATIONS
* Notebook CPU Core - High-Side Switch D G Top View ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Volt.
Part NumberAO4430
DescriptionN-Channel MOSFET
ManufacturerKexin Semiconductor
Overview SMD Type N-Channel MOSFET AO4430 (KO4430) ■ Features ● VDS (V) = 30V ● ID = 18 A (VGS = 10V) ● RDS(ON) ＜ 5.5mΩ (VGS = 10V) ● RDS(ON) ＜ 7.5mΩ (VGS = 4.5V) SOP-8 +0.04 0.21 -0.02 D G S MOSFET 1.5.
* VDS (V) = 30V
* ID = 18 A (VGS = 10V)
* RDS(ON) ＜ 5.5mΩ (VGS = 10V)
* RDS(ON) ＜ 7.5mΩ (VGS = 4.5V) SOP-8 +0.04 0.21 -0.02 D G S MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain
* Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage .

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