AO4430L Datasheet | Alpha & Omega Semiconductors

Description .. provide Features VDS (V) = 30V ID = 18A RDS(ON) < 5.5mΩ (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 4.5V) The AO4430 uses advanced trench technology to excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. AO4430L (Green Product) is offered in a lead free package. D S S S G D D D D SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation Maximum 30 ±20 18 15 80 3 2.1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4430, AO4430L Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=18A Static Drain-Source On-Resistance VGS=4.5V, ID=15A g FS VSD IS Forward Transconductance VDS=5V, ID=18A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C 1 80 4.7 6.5 6.2 82 0.7 1 4.5 6060 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 638 355 0.45 103 VGS=10V, VDS=15V, ID=18A 48 18 15 12 VGS=10V, VDS=15V, RL=0.83Ω, RGEN=3Ω IF=18A, d I/dt=100A/µs 8 51.5 8.8 33.5 22 5.5 8 7.5 1.8 Min 30 1 5 100 2.5 Typ Max Units V µA n A V A mΩ mΩ S V A p F p F p F Ω n C n C n C n C ns ns ns ns ns n C STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) .. Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current RDS(ON) DYNAMIC PARAMETERS Ciss...