| Part Number | AP2301GN Datasheet |
|---|---|
| Manufacturer | VBsemi |
| Overview |
AP2301GN
AP2301GN Datasheet P-Channel 20-V (D-S) MOSFET
MOSFET PRODUCT SUMMARY
VDS (V) - 20
RDS(on) () 0.035 at VGS = - 10 V 0.043 at VGS = - 4.5 V
ID (A)a - 5e
-5e
0.061 at VGS.
* Halogen-free According to IEC 61249-2-21 Definition * TrenchFET® Power MOSFET * 100 % Rg Tested * Compliant to RoHS Directive 2002/95/EC APPLICATIONS * Load Switch * PA Switch * DC/DC Converters ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage. |
AP2301GN Datasheet and Specifications PDF
The AP2301GN is a P-Channel MOSFET.
| Part Number | AP2301GN Datasheet |
|---|---|
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Manufacturer | Advanced Power Electronics Corp |
| Overview | SOT-23 G D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. The SOT-23 package is universally pref. e Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit ℃/W Data and specifications subject to change without notice 200407043 AP2301GN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source B. |