| Part Number | APT5010B2FLL Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
500
V
VGS
Gate-Sourc.
*Drain Current *ID= 46A@ TC=25℃ *Drain Source Voltage- : VDSS=500V(Min) *Static Drain-Source On-Resistance : RDS(on) =0.1Ω(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode power supplies and . |
APT5010B2FLL Datasheet and Specifications PDF
The APT5010B2FLL is a N-Channel MOSFET.
| Part Number | APT5010B2FLL Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Advanced Power Technology |
| Overview | APT5010B2FLL APT5010LFLL 500V 46A 0.100Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switc. issipation @ TC = 25°C Linear Derating Factor 520 Watts 4.0 W/°C TJ,TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4. |