| Part Number | APT5010B2LL Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
500
V
VGS
Gate-Sourc.
*Drain Current *ID= 46A@ TC=25℃ *Drain Source Voltage- : VDSS=500V(Min) *Static Drain-Source On-Resistance : RDS(on) =0.1Ω(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode power supplies and . |
APT5010B2LL Datasheet and Specifications PDF
The APT5010B2LL is a N-Channel MOSFET.
| Part Number | APT5010B2LL Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Advanced Power Technology |
| Overview | 500V 46A 0.100W APT5010B2LL APT5010LLL B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses . orage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy L A C I N H C N E T IO E T C MA N A OR V AD INF 46 184 ±30 ±40 500 4.0 300 46 50 (Repetitive and Non-Repetitive) 1 4 500 Volts Watts W/°C. |