BAT64-06W Datasheet and Specifications PDF

SMD Type Silicon Schottky Diodes BAT64W;BAT64-04W BAT64-05W;BAT64-06W Diodes Features For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused gua.

For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring Low forward voltage BAT64W BAT64-04W BAT64-0 5W Absolute M axim um R atings T a = 25 BAT64-06W Param eter Sym bol D iode reverse voltage VR Forward current IF A verage fo.

Features • Integrated Diffused Guard Ring • Low Forward Voltage • For low-Loss, Fast-Recovery, Meter Protection,Bias Isolation and Clamping Applications • Epoxy Meets UL 94 V-0 Flammability Rating • .

* Integrated Diffused Guard Ring
* Low Forward Voltage
* For low-Loss, Fast-Recovery, Meter Protection,Bias Isolation and Clamping Applications
* Epoxy Meets UL 94 V-0 Flammability Rating
* Halogen Free Available Upon Request By Adding Suffix "-HF"
* Moisture Sensitivity Level 1
* Lead Free Finish/.

Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage • Pb-free (RoHS compliant) packa.

urrent (t ≤ 10ms) VR IF IFSM Average rectified forward current (50/60Hz, sinus) IFAV Total power dissipation Ptot BAT64, TS ≤ 86°C BAT64-02W, -02V TS ≤ 121°C BAT64-04, BAT64-06, TS ≤ 61°C BAT64-04W, BAT64-06W, TS ≤ 111°C BAT64-05, TS ≤ 36°C BAT64-05W, TS ≤ 104°C Junction temperature Tj .

BAT 64...W Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage 3 2 1 VSO05561 BA.

Tstg Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 BAT 64
*W Thermal Resistance Junction - ambient 1) BAT 64W Junction - ambient 1) BAT 64-04/06W Junction - ambient 1) BAT 64-05W Junction - soldering point BAT 64W Junction - soldering point BAT 64-04/06W Junction - solderin.