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BAV74LT1 Datasheet

The BAV74LT1 is a Monolithic Dual Switching Diode. Download the datasheet PDF and view key features and specifications below.

Part NumberBAV74LT1
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BAV74LT1/D Monolithic Dual Switching Diode ANODE 1 3 CATHODE 2 ANODE BAV74LT1 3 1 MAXIMUM RATINGS (EACH DIODE) R. ge Leakage Current (VR = 50 Vdc, TJ = 125°C) (VR = 50 Vdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, measured at IR = 1.0 mA, RL = 100 Ω) 1. FR
* 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 9.
Part NumberBAV74LT1
DescriptionMonolithic Dual Switching Diode
Manufactureronsemi
Overview BAV74LT1 Monolithic Dual Switching Diode Features • Pb−Free Packages are Available http://onsemi.com ANODE 1 2 ANODE MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward.
* Pb
*Free Packages are Available http://onsemi.com ANODE 1 2 ANODE MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 50 200 500 Unit Vdc mAdc mAdc 3 CATHODE 3 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Diss.
Part NumberBAV74LT1
DescriptionMonolithic Dual Switching Diode
ManufacturerLeshan Radio Company
Overview LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode BAV74LT1 3 1 ANODE 3 CATHODE 1 2 ANODE 2 CASE 318–08, STYLE 9 SOT–23 (TO–236AB) DEVICE MARKING BAV74LT1 = JA MAXIMUM. , T J = 125°C) (V R = 50Vdc) Diode Capacitance CD (V R = 0, f = 1.0 MHz) Forward Voltage VF (I F = 100 mAdc) Reverse Recovery Time t rr (I F=IR=10mAdc, IR(REC)=1.0mAdc, measured at IR= 1.0 mA, RL=100Ω) 1. FR
*5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 50
* Vdc µAdc
*.

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