| Part Number | BC846S Datasheet |
|---|---|
| Manufacturer | NXP Semiconductors |
| Overview |
NPN double transistor in an SC-88 (SOT363) plastic six lead package.
PINNING
PIN 1, 4 2, 5 6, 3
emitter base collector
DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2
handbook, halfpage
654
12 3 Top view
.
* Two transistors in one package * Reduces number of components and board space * No mutual interference between the transistors. APPLICATIONS * General purpose switching and small signal amplification. DESCRIPTION NPN double transistor in an SC-88 (SOT363) plastic six lead package. PINNING PIN 1. |
BC846S Datasheet and Specifications PDF
The BC846S is a NPN general purpose double transistor.
| Part Number | BC846S Datasheet |
|---|---|
| Description | DUAL TRANSISTOR |
| Manufacturer | Rectron |
| Overview | only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not. z This device is designed for general purpose amplifier applications z High Stability and High Reliability SOT-363 Mechanical Data z SOT-363 Small Outline Plastic Package z Epoxy UL: 94V-0 z Mounting Position: Any Marking: 4Ft Maximum Ratings & Thermal Characteristics (Ratings at 25℃ ambient temp. |
| Part Number | BC846S Datasheet |
|---|---|
| Description | SMD General Purpose NPN Transistors |
| Manufacturer | Diotec Semiconductor |
| Overview | BC846S, BC847S BC846S, BC847S SMD General Purpose NPN Transistors SMD Universal-NPN-Transistoren IC = 100 mA hFE = 200...450 Tjmax = 150°C VCEO = 45 V, 65 V Ptot = 250 mW Version 2018-02-07 SOT-3. Two transistors in one package General Purpose Compliant to RoHS, REACH, Conflict Minerals 1) WEEE Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Besonderheiten Zwei Transistoren in einem Gehäuse Universell anwendbar RoHS Pb Konform zu RoHS, REACH, Konflik. |
| Part Number | BC846S Datasheet |
|---|---|
| Description | NPN Silicon AF Transistor |
| Manufacturer | Siemens Semiconductor Group |
| Overview | BC 846S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two ( galvanic) internal isolated Transistors wit. °C, unless otherwise specified Parameter Symbol Values min. DC Characteristics per Transistor Collector-emitter breakdown voltage typ. max. 15 5 Unit V(BR)CEO V(BR)CBO V(BR)CES V(BR)EBO I CBO I CBO hFE 65 80 80 6 - V I C = 10 mA, I B = 0 Collector-base breakdown voltage I C = 10 µA, IB = 0 Col. |