BC847S Datasheet and Specifications PDF

The BC847S is a Dual-NPN+NPN Type Bipolar Transistors.

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Part NumberBC847S Datasheet
ManufacturerGood-Ark Semiconductor
Overview of changes First issue 5 Doc.No.672065 BC847S GOOD-ARK Electronics Disclaimers These materials are intended as a reference to assist our customers in the selection of the Suzhou Go.
* Low Profile Package
* Ideal for Automated Placement
* Power Dissipation of 200mW
* High Stability and High Reliability
* RoHS Compliant Applications
* Amplifying signal
* Electronic switch
* Oscillating circuit
* Variable resistance Mechanical Data
* Package: SOT-363
* Lead Finish:Matte Tin
* Case.
Part NumberBC847S Datasheet
DescriptionDual NPN Small Signal Surface Mount Transistor
ManufacturerGalaxy Microelectronics
Overview Production specification Dual NPN Small Signal Surface Mount Transistor FEATURES  Epitaxial planar die construction.  Ultra-small surface mount package. Pb Lead-free BC847S APPLICATIONS  Dual .
* Epitaxial planar die construction.
* Ultra-small surface mount package. Pb Lead-free BC847S APPLICATIONS
* Dual NPN small signal surface mount transistor. ORDERING INFORMATION Type No. Marking BC847S 1C SOT-363 Package Code SOT-363 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symb.
Part NumberBC847S Datasheet
DescriptionSMD General Purpose NPN Transistors
ManufacturerDiotec Semiconductor
Overview BC846S, BC847S BC846S, BC847S SMD General Purpose NPN Transistors SMD Universal-NPN-Transistoren IC = 100 mA hFE = 200...450 Tjmax = 150°C VCEO = 45 V, 65 V Ptot = 250 mW Version 2018-02-07 SOT-3. Two transistors in one package General Purpose Compliant to RoHS, REACH, Conflict Minerals 1) WEEE Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Besonderheiten Zwei Transistoren in einem Gehäuse Universell anwendbar RoHS Pb Konform zu RoHS, REACH, Konflik.
Part NumberBC847S Datasheet
DescriptionNPN Silicon AF Transistor
ManufacturerInfineon
Overview NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated transistors with good m. .

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