The BCP68 is a NPN Transistors.
| Pins | 4 |
|---|---|
| Height | 1.8 mm |
| Max Operating Temp | 150 °C |
| Part Number | BCP68 Datasheet |
|---|---|
| Manufacturer | Kexin Semiconductor |
| Overview |
SMD Type
Transistors
■ Features
● High current (max. 1 A) ● Low voltage (max. 20 V) ● Complements to BCP69
1
NPN Transistors BCP68 (KCP68)
SOT-223
6.50±0.2 3.00±0.1
4
10b
Unit:mm
7.0±0.3 3.50±.
* High current (max. 1 A) * Low voltage (max. 20 V) * Complements to BCP69 1 NPN Transistors BCP68 (KCP68) SOT-223 6.50±0.2 3.00±0.1 4 10b Unit:mm 7.0±0.3 3.50±0.2 2,4 3 1.80 (max) 0.02 ~ 0.1 1 2 3 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Base 2.Collector 3.Emitter 4.Collecto. |
| Part Number | BCP68 Datasheet |
|---|---|
| Description | NPN Silicon Epitaxial Planar Transistor |
| Manufacturer | Galaxy Microelectronics |
| Overview |
NPN Silicon Epitaxial Planar Transistor BCP68
Features
High collector current Low collector-emitter saturation voltage High current gain
Mechanical Data
Case: SOT-223 Molding compound: UL f.
* High collector current * Low collector-emitter saturation voltage * High current gain Mechanical Data * Case: SOT-223 * Molding compound: UL flammability classification rating 94V-0 * Terminals: Tin-plated; solderability per MIL-STD-202, Method 208 SOT-223 Ordering Information Part Number BCP6. |
| Part Number | BCP68 Datasheet |
|---|---|
| Description | NPN General Purpose Amplifier |
| Manufacturer | Fairchild Semiconductor |
| Overview | BCP68 BCP68 NPN General Purpose Amplifier • This device is designed for general purpose medium power amplifiers. • Sourced from process 37. 3 2 1 4 SOT-223 1. Base 2.4. Collector 3. Emitter Absolut. tor-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current DC Current Gain On Characteristics (1) 375 0.5 1 V V VCE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter On Voltage ©2001 Fair. |
| Part Number | BCP68 Datasheet |
|---|---|
| Description | NPN Silicon AF Transistor |
| Manufacturer | Infineon |
| Overview | BCP68 NPN Silicon AF Transistor For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCP69 (PNP) 4 3 2 1 VPS051. haracteristics at TA = 25°C, unless otherwise specified. Parameter Characteristics Collector-emitter breakdown voltage IC = 30 mA, IB = 0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Coll. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| TME | 0 | 1+ : 0.442 EUR 10+ : 0.295 EUR 100+ : 0.179 EUR |
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| TME | 0 | 1+ : 0.45 USD 10+ : 0.295 USD 100+ : 0.179 USD |
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| Newark | 0 | 1+ : 1.2 USD 10+ : 0.749 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| BCP68-25 | Nexperia | 20V 2A NPN medium power transistors |
| BCP68-25 | Infineon | NPN Silicon AF Transistor |
| BCP68-10 | Infineon | NPN Silicon AF Transistor |
| BCP68T1 | Motorola Semiconductor | MEDIUM POWER NPN TRANSISTOR |
| BCP68-16 | Infineon | NPN Silicon AF Transistor |
| BCP68 | NXP Semiconductors | NPN medium power transistor |
| BCP68 | Unisonic Technologies | NPN MEDIUM POWER POWER |