| Part Number | BCV62 Datasheet |
|---|---|
| Manufacturer | Semiware Semiconductor |
| Overview | R FEATURES Low Current Low Voltage Matched Pairs APPLICATIONS Applications With Working Point Independent of Temperature Current Mirrors APPROVALS RoHS Compliance with 2011/65/EU HF Compliance with IE. Low Current Low Voltage Matched Pairs APPLICATIONS Applications With Working Point Independent of Temperature Current Mirrors APPROVALS RoHS Compliance with 2011/65/EU HF Compliance with IEC61249-2-21:2003 BCV62 Dual PNP Small Signal Transistor 1 2 4 3 SOT-143 4 3 TR2 TR1 1 2 Schematic Symb. |
BCV62 Datasheet and Specifications PDF
The BCV62 is a Dual PNP Small Signal Transistor.
Key Specifications
| Pins | 3 |
|---|---|
| Max Operating Temp | 150 °C |
| Part Number | BCV62 Datasheet |
|---|---|
| Description | PNP General-purpose Double Transistor |
| Manufacturer | Galaxy Microelectronics |
| Overview |
PNP General-purpose Double Transistor BCV62
Features
Low current Low voltage Matched pairs RoHS compliant with Halogen-free
Applications
Applications With Working Point Independent of Tempe.
* Low current * Low voltage * Matched pairs * RoHS compliant with Halogen-free Applications * Applications With Working Point Independent of Temperature * Current Mirrors Mechanical Data * Case: SOT-143 * Molding compound: UL flammability classification rating 94V-0 * Terminals: Tin-plated; solderab. |
| Part Number | BCV62 Datasheet |
|---|---|
| Description | PNP Silicon Double Transistor |
| Manufacturer | Infineon |
| Overview | PNP Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) packag. ase refer to Application Note AN077 (Thermal Resistance Calculation) K/W 1 2011-07-25 BCV62 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics of T1 Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Co. |
| Part Number | BCV62 Datasheet |
|---|---|
| Description | PNP Silicon Double Transistors |
| Manufacturer | Siemens Semiconductor Group |
| Overview | PNP Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emitter-saturation voltage q BCV 62 Type BCV 62 A BC. tor Group 1 5.91 BCV 62 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics for transistor T1 Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = . |