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BCW67B Datasheet

The BCW67B is a PNP Transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberBCW67B
ManufacturerInfineon
Overview PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66... (NPN) • Pb-free (RoHS compliant) package • Quali. S ≤ 215 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA A mA mW °C Unit K/W 2 2011-09-15 BCW67, BCW68 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics .
Part NumberBCW67B
DescriptionSILICON PNP TRANSISTORS
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR BCW67 and BCW68 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose . T Cc Ce VCB=Rated VCEO VCB= Rated VCEO, TA=150°C VEB=4.0V IC=10µA (BCW67) IC=10µA (BCW68) IC=10mA (BCW67) IC=10mA (BCW68) IE=10µA IC=100mA, IB=10mA IC=500mA, IB=50mA IC=100mA, IB=10mA IC=500mA, IB=50mA VCE=5.0V, IC=50mA, f=20MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz 45 60 32 45 5.0 200.
Part NumberBCW67B
DescriptionPNP Silicon Epitaxial Planar Transistor
ManufacturerGalaxy Microelectronics
Overview PNP Silicon Epitaxial Planar Transistor BCW67 Features  Complimentary to TBCW65  High collector current  High current gain  Low collector-emitter saturation voltage Mechanic al Data  Case: SOT-2.
* Complimentary to TBCW65
* High collector current
* High current gain
* Low collector-emitter saturation voltage Mechanic al Data
* Case: SOT-23
* Molding compound: UL flammability classification rating 94V-0
* Terminals: Tin-plated; solderability per MIL-STD-202, Method 208 SOT-23 Ordering Info.
Part NumberBCW67B
DescriptionPNP Silicon AF Transistors
ManufacturerSiemens Semiconductor Group
Overview PNP Silicon AF Transistors BCW 67 BCW 68 For general AF applications q High current gain q Low collector-emitter saturation voltage q Complementary types: BCW 65, BCW 66 (NPN) q Type BCW 67 A BCW 6. t V mA A mA mW ˚C 285 215 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BCW 67 BCW 68 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC.

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