BD538 Datasheet and Specifications PDF

The BD538 is a PNP Epitaxial Silicon Transistor.

Key Specifications

Max Operating Temp140 °C
Part NumberBD538 Datasheet
ManufacturerFairchild Semiconductor
Overview BD534/536/538 BD534/536/538 Medium Power Linear and Switching Applications • Low Saturation Voltage • Complement to BD533, BD535 and BD537 respectively 1 TO-220 2.Collector 3.Emitter 1.Base PNP Ep. - 5V, IC = - 10mA VCE = - 2V, IC = - 2A 40 20 15 25 15 30 15 40 20 - 0.8 - 1.5 3 12 75 100 - 0.8 V V V MHz Min. Typ. Max. - 100 - 100 - 100 - 100 - 100 - 100 -1 Units µA µA µA µA µA µA mA ICES Collector Cut-off Current IEBO hFE Emitter Cut-off Current * DC Current Gain : ALL DEVICE : BD534/536 .
Part NumberBD538 Datasheet
DescriptionCOMPLEMENTARY SILICON POWER TRANSISTORS
ManufacturerSTMicroelectronics
Overview The BD533, BD535, and BD537 are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in medium power linear and switching applications. The complementary PNP . ne 1997 1/4 BD533/BD534/BD535/BD536/BD537/BD538 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 2.5 70 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Cu.
Part NumberBD538 Datasheet
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·DC Current Gain - : hFE = 40@ IC= -0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -80V(Min) ·Complement to Type BD537 APPLICATIONS ·Designed for use in medium power linear and switching ap. specified SYMBO L PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Voltage Sustaining IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Voltage Saturation IC= -2A; IB= -0.2A VCE(sat)-2 Collector-Emitter Voltage Saturation IC= -6A; IB= -0.6A VBE(on) Base-Emitter On Voltage IC= -2A ; VCE= -.
Part NumberBD538 Datasheet
DescriptionPower Transistor
ManufacturerMotorola Semiconductor
Overview . .

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