BD546 Datasheet
BD546 Datasheet (Bourns)
Bourns
BD546, BD546A, BD546B, BD546C PNP SILICON POWER TRANSISTORS ● ● ● ● Designed for Complementary Use with the BD545 Series 85 W at 25°C Case Temperature 15 A Continuous Collector .
uited. 2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. VEBO IC Ptot Ptot TA Tj Tstg TL VCEO V CBO SYMBOL VALUE -40 -60 -80 -100 -40 -60 -80 -100 -5 -15 85 3.5 -65 to +150 -65 to +150 -65 to +150 260 V A .
BD546 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Collector Current -IC= -15A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -40V(Min)- BD546; -60V(Min)- BD546A -80V(Min)- BD546B; -100V(Min)- BD546C ·Complement to Type BD545/A/B/C ·Minimum Lot-t.
e 1.47 ℃/W Rth j-c Thermal Resistance,Junction to Ambient 35.7 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BD546 V(BR)CEO Collector-Emitter Breakdown .