BDW83C Datasheet

The BDW83C is a NPN power Darlington transistor.

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Part NumberBDW83C
ManufacturerSTMicroelectronics
Overview te PThe BDW83C is an epitaxial-base NPN power lemonolithic Darlington transistor mounted in oTO-247 plastic package. It is intended for use in Obsolete Product(s) - Obspower linear and switching appli.
* High current capability
* Fast switching speed
* High DC current gain t(s)Applications uc
* Linear and switching industrial equipment rodDescription te PThe BDW83C is an epitaxial-base NPN power lemonolithic Darlington transistor mounted in oTO-247 plastic package. It is intended for use in Obso.
Part NumberBDW83C
DescriptionNPN SILICON POWER DARLINGTONS
ManufacturerBourns
Overview BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D 150 W at 25°C Case Temperature 15 A Continuous Coll. ) Operating junction temperature range Operating temperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. 5 15 0.5 150 3.5 100 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case.
Part NumberBDW83C
DescriptionNPN SILICON POWER DARLINGTONS
ManufacturerComset Semiconductors
Overview NPN BDW83, BDW83A, BDW83B, BDW83C, BDW83D, NPN SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial-base NPN power monolithic Darlington transistor mounted in Jedec TO-218 plastic package.. Air Thermal Resistance 23/10/2012 COMSET SEMICONDUCTORS 1|3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BDW83, BDW83A, BDW83B, BDW83C, BDW83D, ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) BDW83 BDW83A IC=30 mA BDW83B IB=0 BDW83C BDW83D BDW.
Part NumberBDW83C
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-3PN package ·Complement to type BDW84/84A/84B/84C/84D ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in power linear and switching applications. PINNING PIN 1 2 3. rwise specified PARAMETER BDW83 BDW83A V(BR)CEO Collector-emitter breakdown voltage BDW83B BDW83C BDW83D VCEsat-1 VCEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage BDW83 BDW83A ICBO Collector cut-off current BDW83B BDW83C BDW83D BDW83 BDW8.