| Part Number | BDW84B |
|---|---|
| Manufacturer | SavantIC |
| Overview | ·With TO-3PN package ·Complement to type BDW83/83A/83B/83C/83D ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in power linear and switching applications. PINNING PIN 1 2 3. 5 unless otherwise specified PARAMETER BDW84 BDW84A V(BR)CEO Collector-emitter breakdown voltage BDW84B BDW84C BDW84D VCEsat-1 VCEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage BDW84 BDW84A ICBO Collector cut-off current BDW84B BDW84C BDW8. |
BDW84B Datasheet
The BDW84B is a SILICON POWER TRANSISTOR.
| Part Number | BDW84B |
|---|---|
| Description | PNP SILICON POWER DARLINGTONS |
| Manufacturer | Bourns |
| Overview | BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW83, BDW83A, BDW83B, BDW83C and BDW83D 150 W at 25°C Case Temperature. 2. 3. 4. VEBO IC IB Ptot Ptot ½LIC2 Tj Tstg TA VCEO V CBO SYMBOL VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -15 -0.5 150 3.5 100 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C V V UNIT These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C ca. |
| Part Number | BDW84B |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector Current -IC= -15A ·High DC Current Gain-hFE= 750(Min)@ IC= -6A ·Complement to Type BDW83/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO. ww.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDW84/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDW84 -45 V(BR)CEO Collector-Emitter Breakdown Voltage BDW84A BDW84B. |
| Part Number | BDW84B |
|---|---|
| Description | PNP SILICON POWER DARLINGTONS |
| Manufacturer | Comset Semiconductors |
| Overview |
PNP BDW84 – BDW84A – BDW84B BDW84C – BDW84D PNP SILICON DARLINGTONS POWER TRANSISTORS
They are silicon epitaxial-base PNP power monolithic Darlington transistor mounted in Jedec TO-218 plastic package.
istance
Value
0.83 35.7
Unit
°C/W
23/10/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/
PNP BDW84 * BDW84A * BDW84B BDW84C * BDW84D ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) BDW84 BDW84A BDW84B BDW84C BDW84D BDW8. |